PhD in Physics in GEMaC lab at University of Versailles, France

Phd Courses Lab GEMaC-famous Versailles in this field, especially in the study of "Diamond", "ZnO" and "Magnetic oxide" in the thin film.
Common point for all semiconductors is that they are large band gap materials (optical band gap> 2.5eV), with intrinsic and / or extrinsic defects are very local level.
This Phd Courses thesis will comprise the first experimental in the conception and realization of new concept experiment, called "4-coefficient in high magnetic fields." This characterization will provide the possibility (thanks to the special geometry of the electrical contacts) to measure for the same sample four electrical transport coefficients: resistivity, Hall constant, Seebeck coefficient and Nernst coefficient. All measurements will be made to thin layers and ultra-thin in a high magnetic field (± 9T). It measured 4 coefficient would allow us to characterize the electronic band structure in the center-Brillouin zone (Fermi energy, the effective mass, scattering parameters). We Phd Courses will study different materials and the like in GEMaC (doped ZnO and diamond and Fe 2-d-xTixO3 or magnetic oxide LaNiO3-δ), presents the localization service charge ', although it is of a different nature. http://www.callforpapersinfo.com
http://thescholarshipprogramme.com One part of this thesis will concern lithography at CTU MINERVE Orsay (in collaboration with P. Lecoeur, IEF-Orsay). This unique experimental set-up, realized during this PhD thesis will be working within a temperature range 2K-400K, in a 9T magnetic field, provided the platform from GEMaC NOVATECS. The Phd Courses transition between local and delocalized states of charge carriers will be studied versus temperature and versus magnetic field are different.

How to Apply: Candidates are invited to submit their applications in yves.dumont-in-uvsq.fr

Scholarship Application Deadline: Employer Contact

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